ISTFA 2019 (featuring patent pending Ag wire plasma decapsulation process)
“Artifact-Free Decapsulation of Silver Wire Bonded Semiconductor Devices Using Microwave Induced Plasma”J. Tang, D. Lohier, B. Forgerit, G. Gabaston, J. Wang, W. van den Hoek and C.I.M. Beenakker
Proceedings from the 45th International Symposium for Testing and Failure Analysis (ISTFA 2019)
This work is done in collaboration with Hirex Engineering.
Decapsulation of silver wire bonded packages with known techniques often results in damaged silver wires. The chemical properties of silver and silver compounds make silver bond wire inherently susceptible to etching damage by acid, conventional plasma, and oxygen-based Microwave Induced Plasma (MIP). In this paper we solved this problem by developing a specific decapsulation chemistry, based on a hydrogen-containing atmospheric pressure MIP, for artifact-free decapsulation of silver wire bonded packages.